View APT8024LFLL_1211954.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT8024B2FLL APT8024LFLL
POWER MOS 7
(R)
800V 31A 0.260
B2FLL
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
T-MAXTM
TO-264
LFLL
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT8024B2_LFLL UNIT Volts Amps
800 31 124 30 40 565 4.52 -55 to 150 300 31 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.260 250 1000 100 3 5
(VGS = 10V, ID = 15.5A)
Ohms A nA Volts
5-2006 050-7074 Rev C
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT8024B2_LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 31A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 533V VGS = 15V ID = 31A, RG = 5 ID = 31A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
4670 860 155 160 24 105 9 5 23 4 645 525 1040 625
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
31 124 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -31A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -31A, di/dt = 100A/s) Reverse Recovery Charge (IS = -ID 31A, di/dt = 100A/s) Peak Recovery Current (IS = -31A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
300 600 2.0 6.7 13 22
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 2.00mH, RG = 25, Peak IL = 31A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID31A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
D = 0.9
0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
5-2006
050-7074 Rev C
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
80 70 60 50 40 30 20 10 0 0 VGS =15 &10 V
APT8024B2_LFLL
8V
ID, DRAIN CURRENT (AMPERES)
7.5V
TJ ( C)
0.0893 Dissipated Power (Watts) 0.0103 0.106 0.0981 0.0842
TC ( C)
0.0485
7V
ZEXT
6.5V 6V 5.5V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
NORMALIZED TO = 10V @ 15.5A
ID, DRAIN CURRENT (AMPERES)
80
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
60
40 TJ = +125C 20 TJ = +25C 0 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = -55C
VGS=20V
0
35 30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
I
D
1.2
= 15.5A = 10V V
GS
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1 1.0 0.9 0.8 0.7 0.6 -50
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7074 Rev C
5-2006
127
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
C, CAPACITANCE (pF)
APT8024B2_LFLL
50
Ciss
100S 10 5 TC =+25C TJ =+150C SINGLE PULSE 1mS 10mS
1,000 Coss
1
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
Crss
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 31A
200 100 TJ =+150C TJ =+25C 10
12
VDS= 160V VDS= 400V VDS= 640V
8
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 140 120 td(off)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80 70 60
V
DD G
= 533V
R
= 5
T = 125C
J
td(on) and td(off) (ns)
100 80 60 40 20 0
L = 100H
V
DD G
= 533V
R
= 5
tr and tf (ns)
50 40 30 20 10 tf
T = 125C
J
L = 100H
tr
td(on) 0 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20
30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000
V = 533V
0
0
10
20
2000
= 533V R = 5
3500
SWITCHING ENERGY (J)
DD
I
T = 125C
D J
= 31A
SWITCHING ENERGY (J)
1500
J
T = 125C
Eoff
L = 100H E ON includes diode reverse recovery.
3000 2500 2000
Eon
L = 100H EON includes diode reverse recovery.
1000
Eon 1500 1000 500 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5
5-2006
500 Eoff 0
050-7074 Rev C
25 30 35 40 45 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
5
10
15
20
Typical Performance Curves
Gate Voltage
APT8024B2_LFLL
10 % td(on) 90% tr 5% 10 %
Switching Energy
90%
T = 125 C J
Drain Current
Gate Voltage
td(off)
Drain Voltage
T = 125 C J
90% t f
5%
Drain Voltage
Switching Energy
10%
Drain Current
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7074 Rev C
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
5-2006
19.81 (.780) 20.32 (.800)
Gate Drain Source
Gate Drain Source

▲Up To Search▲

Price & Availability of APT8024LFLL

	To Download APT8024LFLL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .